Polarization and valley switching in monolayer group-IV monochalcogenides

被引:145
作者
Hanakata, Paul Z. [1 ]
Carvalho, Alexandra [2 ,3 ]
Campbell, David K. [1 ]
Park, Harold S. [4 ]
机构
[1] Boston Univ, Dept Phys, 590 Commonwealth Ave, Boston, MA 02215 USA
[2] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore
[4] Boston Univ, Dept Mech Engn, Boston, MA 02215 USA
基金
新加坡国家研究基金会;
关键词
TRANSITION; PHOSPHORENE;
D O I
10.1103/PhysRevB.94.035304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer SnS and GeSe, two prototype materials where the direction of the puckering can be switched by application of tensile stress or electric field. Furthermore, the two inequivalent valleys in momentum space, which are dictated by the puckering orientation, can be excited selectively using linearly polarized light, and this provides an additional tool to identify the polarization direction. Our findings suggest that SnS and GeSe monolayers may have observable ferroelectricity and multistability, with potential applications in information storage.
引用
收藏
页数:7
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