The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

被引：21

作者：

Gassoumi, M. ^{[1
]}

Ben Salem, M. M. ^{[1
]}

Saadaoui, S. ^{[1
]}

Grimbert, B. ^{[2
]}

Fontaine, J. ^{[2
]}

Gaquiere, C. ^{[2
]}

Maaref, H. ^{[1
]}

机构：

[1] Fac Sci Monastir, Lab Microoptoelect & Nanostruct, Monastir 5000, Tunisia

[2] Univ Sci & Technol Lille, IEMN, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 04期

关键词：

AlGaN/GaN; HEMT; CDLTS; Deep level; Gate length; Surface traps; FIELD-EFFECT TRANSISTORS; FLICKER-NOISE; DEEP LEVELS; GAN; HETEROSTRUCTURES; PLATE;

D O I：

10.1016/j.mee.2010.09.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In AlGaN/GaN heterostructure field-effect transistors, the surface defects and dislocations may serve as trapping centers and affect the device performance via leakage current. In this paper we report results of our investigation of the trapping characteristics of Al0.25Ga0.75N/GaN HEMT using the Conductance Deep Level Transient Spectroscopy (CDLTS). Two deep level electronic defects were observed labeled E-1 and HL1, with activation energies E-a1 = 1.36 eV and E-a2 = 0.63 eV. The hole-trap HL1 is characterized for the first time in our studies. We identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and the surface along the ungated region between the gate and the drain, as well as the effects of the surface traps. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：370 / 372

页数：3

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