Preparation of oxide buffers on a cube-textured Ni substrate for coated conductor by CVD

NiO films have been grown by metal-organic chemical vapor deposition(MOCVD) on a cube-textured Ni substrate. At a lower deposition temperature of 400 degreesC, an amorphous film was formed. Deposited CeO2 film showed a mixed texture of (100)< 001 > and (100)< 011 > orientations. Depending on the deposition condition, the transition from (100)< 001 > texture to (100)< 011 > orientation was observed for the CeO2 film. The NiO film was deposited at 470 degreesC for 10min, Deposition pressure was 10 Torr and the oxygen partial pressure was 0.91 Torr, X-ray reeking curve and phi -scan showed that the NiO film has a bi-axial texture with a (100)< 001> orientation. The out-of-plane and the in-plane deviation were measured as 4.2 degrees and 6 similar to7 degrees from the FWHM of (200) and (111) planes, respectively.