Raman scattering of single-walled carbon nanotubes implanted with ultra-low-energy oxygen ions

被引:7
作者
Ohno, Y
Inoue, K
Kamimura, T
Maehashi, K
Yamamoto, K
Matsumoto, K
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词
carbon nanotube; oxygen ion implantation; ultra-low energy; Raman scattering; first principle pseudopotential method; tight-binding model;
D O I
10.1143/JJAP.44.1615
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-walled carbon nanotubes (SWNTs) implanted with ultra-low-energy oxygen (O(+)) ions have been studied by means of Raman scattering experiments. The relative intensities of the D-band related to some defects increase with the O(+) dose in the Raman spectra of the implanted samples. Although no recognizable shift of phonon energies due to the ion implantation has been observed, the intensities of the Stokes and anti-Stokes lines originated from radial breathing modes of SWNTs which exhibit various behaviors due to degree of the implantation, indicating that the resonant energies are changed. To explain these findings, the structure and the electronic states of SWNTs with substitutional O impurities have been studied by applying theoretical calculations based on the first principle method and a tight-binding method. As a result, it has been suggested that the incorporation of oxygen atoms at carbon sites is plausible, and the experimental observation can thus be consistently explained on the basis of the O impurities in SWNTs.
引用
收藏
页码:1615 / 1620
页数:6
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