Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

被引：30

作者：

Dochev, D. ^{[1
]}

Desmaris, V. ^{[1
]}

Pavolotsky, A. ^{[1
]}

Meledin, D. ^{[1
]}

Lai, Z. ^{[2
]}

Henry, A. ^{[3
]}

Janzen, E. ^{[3
]}

Pippel, E. ^{[4
]}

Woltersdorf, J. ^{[4
]}

Belitsky, V. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Grp Adv Receiver Dev, Dept Earth & Space Sci, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Nanofabricat Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[4] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2011年 / 24卷 / 03期

关键词：

BANDWIDTH; MIXER; CVD;

D O I：

10.1088/0953-2048/24/3/035016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T-C) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T-C = 11.3 K and critical current density of about 2.5 MA cm(-2) at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

引用

页数：6

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