Molecular control over Ag/p-Si diode by organic layer

被引：39

作者：

Aydin, M. E.

Yakuphanoglu, F. ^{[1
]}

机构：

[1] Firat Univ, Dept Phys, Fac Arts & Sci, Elazig 23119, Turkey

[2] Univ Dicle, Dept Phys, Fac Arts & Sci, Dicle 21280, Turkey

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2007年 / 68卷 / 09期

关键词：

semiconductors; organic compounds; electrical properties;

D O I：

10.1016/j.jpcs.2007.04.023

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current-voltage (I-V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I-V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height (phi(b) = 0.98 eV) obtained from the capacitance-voltage (C-V) curve is higher than barrier height (phi(b) = 0.72 eV) derived from the I-V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO2 residual oxides on the hybrid diode. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1770 / 1773

页数：4

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