Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

被引:5
|
作者
Menendez-Proupin, E
Pena, JL
Trallero-Giner, C
机构
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Merida 97310, Yucatan, Mexico
[2] Univ La Habana, Dept Fis Teor, Vedado 10400, La Habana, Cuba
[3] Inst Politecn Nacl, Ctr Invest Ciencia Aplicada & Technol Avanzada, Dept Fis, Mexico City 11500, DF, Mexico
关键词
D O I
10.1088/0268-1242/13/8/007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.
引用
收藏
页码:871 / 875
页数:5
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