Novel nano-fabrication technique utilizing ion beam

Novel nano-fabrication technique is proposed on the basis of knowledge of anomalous behavior in ion-implanted GaSb and InSb at low temperatures. An initial array of hollows or voids is fabricated precisely on or under the substrate surface by focussed ion beam (FIB) and the structure is developed self-organizationally utilizing movement of point defects induced by ion implantation at relatively low temperatures. The precision in this technique is dominated mainly by extension of irradiation damage. Structure of 20-nm scale is fabricated at present technical level and that of 5-nm scale will be realized by improving the accuracy of FIB. (C) 2003 Elsevier Science B.V. All rights reserved.