Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

被引：29

作者：

Javanainen, Arto ^{[1
,2
]}

Galloway, Kenneth F. ^{[2
]}

Ferlet-Cavrois, Veronique ^{[3
]}

Lauenstein, Jean-Marie ^{[4
]}

Pintacuda, Francesco ^{[5
]}

Schrimpf, Ronald D. ^{[2
]}

Reed, Robert A. ^{[2
]}

Virtanen, A. ^{[1
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, Jyvaskyla 40014, Finland

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[3] European Space Agcy, European Space Res & Technol Ctr, NL-2200 Noordwijk, Netherlands

[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[5] STMicroelectronics Srl, I-95121 Catania, Italy

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 02期

基金：

芬兰科学院;

关键词：

Current-voltage characteristics; ion radiation effects; modeling; power semiconductor devices; Schottky diodes; silicon carbide (SiC); SINGLE-EVENT BURNOUT; BARRIER DIODES; ENERGY; DAMAGE;

D O I：

10.1109/TDMR.2016.2557585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Under heavy-ionexposure at sufficiently high reversebias voltages, silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.

引用

页码：208 / 212

页数：5

共 19 条

[1] Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes [J].

Abbate, C. ;

Busatto, G. ;

Cova, P. ;

Delmonte, N. ;

Giuliani, F. ;

Iannuzzo, F. ;

Sanseverino, A. ;

Velardi, F. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) :202-209

[2]

Armstrong S. E., 2015, P IEEE REDW, P1

[3] Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs [J].

Asai, Hiroaki ;

Nashiyama, Isamu ;

Sugimoto, Kenji ;

Shiba, Kensuke ;

Sakaide, Yasuo ;

Ishimaru, Yasuo ;

Okazaki, Yuji ;

Noguchi, Kenta ;

Morimura, Tadaaki .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) :3109-3114

[4] Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes [J].

Asai, Hiroaki ;

Sugimoto, Kenji ;

Nashiyama, Isamu ;

Iide, Yoshiya ;

Shiba, Kensuke ;

Matsuda, Mieko ;

Miyazaki, Yoshio .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) :880-885

[5] Schottky Diode Derating for Survivability in a Heavy Ion Environment [J].

Casey, Megan C. ;

Lauenstein, Jean-Marie ;

Ladbury, Raymond L. ;

Wilcox, Edward P. ;

Topper, Alyson D. ;

LaBel, Kenneth A. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :2482-2489

[6] Discharge from hot CaO. [J].

Child, CD .

PHYSICAL REVIEW, 1911, 32 (05) :0492-0511

[7] Influence of Beam Conditions and Energy for SEE Testing [J].

Ferlet-Cavrois, Veronique ;

Schwank, James R. ;

Liu, Sandra ;

Muschitiello, Michele ;

Beutier, Thierry ;

Javanainen, Arto ;

Hedlund, Alex ;

Poivey, Christian ;

Mohammadzadeh, Ali ;

Harboe-Sorensen, Reno ;

Santin, Giovanni ;

Nickson, Bob ;

Menicucci, Alessandra ;

Binois, Christian ;

Peyre, Daniel ;

Hoeffgen, Stefan Klaus ;

Metzger, Stefan ;

Schardt, Dieter ;

Kettunen, Heikki ;

Virtanen, Ari ;

Berger, Guy ;

Piquet, Bruno ;

Foy, Jean-Claude ;

Zafrani, Max ;

Truscott, Pete ;

Poizat, Marc ;

Bezerra, Francoise .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) :1149-1160

[8] Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination [J].

Itoh, A ;

Kimoto, T ;

Matsunami, H .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :139-141

[9]

Javanainen A., 2015, EUROPEAN COMPONENT I

[10] A simple expression for electronic stopping force of heavy ions in solids [J].

Javanainen, Arto .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 285 :158-161

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