Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

被引：115

作者：

Meyaard, David S. ^{[1
]}

Shan, Qifeng ^{[2
]}

Cho, Jaehee ^{[1
]}

Schubert, E. Fred ^{[1
,2
]}

Han, Sang-Heon ^{[3
]}

Kim, Min-Ho ^{[3
]}

Sone, Cheolsoo ^{[3
]}

Oh, Seung Jae ^{[4
]}

Kim, Jong Kyu ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12181 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Samsung LED, R&D Inst, Suwon 443743, South Korea

[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.3688041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688041]

引用

页数：3

共 50 条

[1] Efficiency droop in AlGaInP and GaInN light-emitting diodes
Shim, Jong-In
Han, Dong-Pyo
Kim, Hyunsung
Shin, Dong-Soo
Lin, Guan-Bo
Meyaard, David S.
Shan, Qifeng
Cho, Jaehee
Schubert, E. Fred
Shim, Hyunwook
Sone, Cheolsoo
APPLIED PHYSICS LETTERS, 2012, 100 (11)
[2] High Injection and Efficiency Droop in GaInN Light-Emitting Diodes
Lin, Guan-Bo
Meyaard, David S.
Schubert, E. Fred
Cho, Jaehee
Kim, Jong Kyu
Shim, Hyunwook
Kim, Min-Ho
Sone, Cheolsoo
2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2014,
[3] Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
Chhajed, Sameer
Cho, Jaehee
Schubert, E. Fred
Kim, Jong Kyu
Koleske, Daniel D.
Crawford, Mary H.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (04): : 947 - 950
[4] Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Dai, Qi
Shan, Qifeng
Wang, Jing
Chhajed, Sameer
Cho, Jaehee
Schubert, E. Fred
Crawford, Mary H.
Koleske, Daniel D.
Kim, Min-Ho
Park, Yongjo
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[5] Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes
Schubert, Martin F.
Chhajed, Sameer
Kim, Jong Kyu
Schubert, E. Fred
Koleske, Daniel D.
Crawford, Mary H.
Lee, Stephen R.
Fischer, Arthur J.
Thaler, Gerald
Banas, Michael A.
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[6] Temperature Dependence of Efficiency in GaInN/GaN Light-Emitting Diodes with a GaInN Underlayer
Kim, Kyurin
Cho, Jaehee
Meyaard, David S.
Lin, Guan-Bo
Schubert, E. Fred
Kim, Jong Kyu
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2016, 13 (02) : 234 - 238
[7] Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
Meyaard, David S.
Lin, Guan-Bo
Shan, Qifeng
Cho, Jaehee
Schubert, E. Fred
Shim, Hyun Wook
Kim, Min-Ho
Sone, Cheolsoo
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
[8] Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
Meyaard, David S.
Lin, Guan-Bo
Shan, Qifeng
Cho, Jaehee
Schubert, E. Fred
Shim, Hyunwook
Kim, Min-Ho
Sone, Cheolsoo
APPLIED PHYSICS LETTERS, 2011, 99 (25)
[9] Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
Meyaard, David S.
Lin, Guan-Bo
Cho, Jaehee
Schubert, E. Fred
Shim, Hyunwook
Han, Sang-Heon
Kim, Min-Ho
Sone, Cheolsoo
Kim, Young Sun
APPLIED PHYSICS LETTERS, 2013, 102 (25)
[10] Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
Kudryk, Ya Ya
Tkachenko, A. K.
Zinovchuk, A. V.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (05)

← 1 2 3 4 5 →