Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

被引：119

作者：

Meyaard, David S. ^{[1
]}

Shan, Qifeng ^{[2
]}

Cho, Jaehee ^{[1
]}

Schubert, E. Fred ^{[1
,2
]}

Han, Sang-Heon ^{[3
]}

Kim, Min-Ho ^{[3
]}

Sone, Cheolsoo ^{[3
]}

Oh, Seung Jae ^{[4
]}

Kim, Jong Kyu ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12181 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Samsung LED, R&D Inst, Suwon 443743, South Korea

[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

Indium alloys - Gallium alloys - Semiconductor alloys - Efficiency;

D O I：

10.1063/1.3688041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688041]

引用

页数：3

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