Express determination of thickness and dielectric function of single-walled carbon nanotube films

被引:56
作者
Ermolaev, Georgy A. [1 ,2 ]
Tsapenko, Alexey P. [1 ,3 ]
Volkov, Valentyn S. [2 ,4 ]
Anisimov, Anton S. [5 ]
Gladush, Yury G. [1 ]
Nasibulin, Albert G. [1 ,3 ]
机构
[1] Skolkovo Inst Sci & Technol, Moscow 143026, Russia
[2] Moscow Inst Phys & Technol, Ctr Photon & 2D Mat, Dolgoprudnyi 141700, Russia
[3] Aalto Univ, Espoo 00076, Finland
[4] Skolkovo Innovat Ctr, GrapheneTek, Moscow 143026, Russia
[5] Canatu Ltd, Konalankuja 5, Helsinki 00390, Finland
基金
俄罗斯基础研究基金会; 俄罗斯科学基金会;
关键词
THIN-FILMS; OPTICAL ANISOTROPY; TRANSPARENT; FABRICATION; ELECTRODES; GRAPHENE;
D O I
10.1063/5.0012933
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-walled carbon nanotube (SWCNT) films are promising building blocks for diversified applications in electronics, photovoltaics, and photonics. However, their electrical and optical engineering is still a challenging task owing to multiple obstacles, including the absence of fast and easy-to-use methods for the determination of SWCNT film properties. Here, we present a rapid, contactless, and universal technique for accurate estimation of both SWCNT film thicknesses and their dielectric functions. The approach combines broadband optical absorbance and highly sensitive spectroscopic ellipsometry measurements. The observed linear dependence of the film thickness on its absorbance at 550nm provides a time-effective and contactless method of thickness assignment, which is of significant importance to the practical implementation of SWCNT films in optoelectronic devices. Additionally, our approach revealed that a simple procedure of film densification allows to controllably alter the dielectric response by at least 40% and, thus, to add extra fine-tuning capabilities during material property engineering. Therefore, this express technique as a whole offers an advanced metrological tool for current and next-generation SWCNT-based devices.
引用
收藏
页数:5
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