Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

被引：10

作者：

Kang, Jiyeon ^{[1
]}

Moon, Kyeong-Ju ^{[1
]}

Lee, Tae Il ^{[1
]}

Lee, Woong ^{[2
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyoungnam, South Korea

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Thin film transistors; Indium compounds; Electromigration; Amorphous semiconductors; TIN-OXIDE; INSTABILITY MECHANISMS; POLYMER; TRANSPARENT; DIFFUSION;

D O I：

10.1016/j.apsusc.2011.11.104

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：3509 / 3512

页数：4

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