All perovskite Capacitor (APEC) technology for (Ba,Sr)TiO3 capacitor scaling toward 0.10μm stacked DRAMs

被引：35

作者：

Hieda, K ^{[1
]}

Eguchi, K ^{[1
]}

Fukushima, N ^{[1
]}

Aoyama, T ^{[1
]}

Natori, K ^{[1
]}

Kiyotoshi, M ^{[1
]}

Yamazaki, S ^{[1
]}

Izuha, M ^{[1
]}

Niwa, S ^{[1
]}

Fukuzumi, Y ^{[1
]}

Ishibashi, Y ^{[1
]}

Kohyama, Y ^{[1
]}

Arikado, T ^{[1
]}

Okumura, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Eng Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

All perovskite Capacitor (APEC) technology is proposed to achieve (Ba, Sr)TiO3(BST) capacitor scaling toward 0.10 mu m DRAM generation. A conductive perovskite-oxide (polycrystalline SrRuO3 (SRO)) electrode is introduced as a bottom and a top electrode of BST capacitor. Advantages of APEC technology are low leakage current and less damage to hydrogen-annealing. A new BST-CVD tool with a good film uniformity is also developed to realize a BST film thickness decrease. Both APEC and the new BST-CVD tool are found to be a promising technology for future BST capacitors scaling.

引用

页码：807 / 810

页数：4

共 5 条

[1] Epitaxial (Ba,Sr)TiO3 capacitors with extremely high dielectric constant for DRAM applications [J].

Fukushima, N ;

Abe, K ;

Izuha, M ;

Schimizu, T ;

Kawakubo, T .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :257-260

[2] Electrical properties and microstructures of Pt/Ba0.5Sr0.5TiO3/SrRuO3 capacitors [J].

Izuha, M ;

Abe, K ;

Koike, M ;

Takeno, S ;

Fukushima, N .

APPLIED PHYSICS LETTERS, 1997, 70 (11) :1405-1407

[3]

KIYOTOSHI M, 1997, ELECTROCHEMICAL SOC, V25, P1063

[4] DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].

KUROIWA, T ;

TSUNEMINE, Y ;

HORIKAWA, T ;

MAKITA, T ;

TANIMURA, J ;

MIKAMI, N ;

SATO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5187-5191

[5] Electrode-induced degradation of Pb(ZrxTi1-x)O-3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors [J].

KushidaAbdelghafar, K ;

Miki, H ;

Torii, K ;

Fujisaki, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (21) :3188-3190

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