Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

被引：19

作者：

Keeble, D. J. ^{[1
]}

Jalan, B. ^{[2
]}

Ravelli, L. ^{[3
]}

Egger, W. ^{[3
]}

Kanda, G. ^{[1
]}

Stemmer, S. ^{[2
]}

机构：

[1] Univ Dundee, Carnegie Lab Phys, SUPA, Sch Engn Phys & Math, Dundee DD1 4HN, Scotland

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Bundeswehr Munchen, D-85577 Neubiberg, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 23期

基金：

美国国家科学基金会;

关键词：

POSITRON TRAPPING RATES; SILICON;

D O I：

10.1063/1.3664398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]

引用

页数：3

共 17 条

[1] Unprecedented intensity of a low-energy positron beam [J].

Hugenschmidt, C. ;

Loewe, B. ;

Mayer, J. ;

Piochacz, C. ;

Pikart, P. ;

Repper, R. ;

Stadlbauer, M. ;

Schreckenbach, K. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 593 (03) :614-619

[2] Enhancing the electron mobility of SrTiO3 with strain [J].

Jalan, Bharat ;

Allen, S. James ;

Beltz, Glenn E. ;

Moetakef, Pouya ;

Stemmer, Susanne .

APPLIED PHYSICS LETTERS, 2011, 98 (13)

[3] Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach [J].

Jalan, Bharat ;

Engel-Herbert, Roman ;

Wright, Nicholas J. ;

Stemmer, Susanne .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (03) :461-464

[4] CHARGE-STATE DEPENDENCES OF POSITRON TRAPPING RATES ASSOCIATED WITH DIVACANCIES AND VACANCY-PHOSPHORUS PAIRS IN SI [J].

KAWASUSO, A ;

HASEGAWA, M ;

SUEZAWA, M ;

YAMAGUCHI, S ;

SUMINO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A) :2197-2206

[5] Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films [J].

Keeble, D. J. ;

Wicklein, S. ;

Dittmann, R. ;

Ravelli, L. ;

Mackie, R. A. ;

Egger, W. .

PHYSICAL REVIEW LETTERS, 2010, 105 (22)

[6] Identification of vacancy defects in a thin film perovskite oxide [J].

Keeble, D. J. ;

Mackie, R. A. ;

Egger, W. ;

Loewe, B. ;

Pikart, P. ;

Hugenschmidt, C. ;

Jackson, T. J. .

PHYSICAL REVIEW B, 2010, 81 (06)

[7] Cation vacancies in ferroelectric PbTiO3 and Pb(Zr,Ti)O3:: A positron annihilation lifetime spectroscopy study [J].

Keeble, D. J. ;

Singh, S. ;

Mackie, R. A. ;

Morozov, M. ;

McGuire, S. ;

Damjanovic, D. .

PHYSICAL REVIEW B, 2007, 76 (14)

[8] Dramatic mobility enhancements in doped SrTiO3 thin films by defect management [J].

Kozuka, Y. ;

Hikita, Y. ;

Bell, C. ;

Hwang, H. Y. .

APPLIED PHYSICS LETTERS, 2010, 97 (01)

[9]

Krause-Rehberg R., 1999, Positron Annihilation in Semiconductors: Defect Studies

[10] Vacancy defect positron lifetimes in strontium titanate [J].

Mackie, R. A. ;

Singh, S. ;

Laverock, J. ;

Dugdale, S. B. ;

Keeble, D. J. .

PHYSICAL REVIEW B, 2009, 79 (01)

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