Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

被引：2

作者：

Sugiyama, M ^{[1
]}

Nosaka, T ^{[1
]}

Nakajima, K ^{[1
]}

Ahmet, P ^{[1
]}

Aoyama, T ^{[1
]}

Chikyow, T ^{[1
]}

Chichibu, SF ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303410

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 rim, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2099 / 2102

页数：4

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