Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

被引：485

作者：

Cao, H ^{[1
]}

Zhao, YG ^{[1
]}

Ong, HC ^{[1
]}

Ho, ST ^{[1
]}

Dai, JY ^{[1
]}

Wu, JY ^{[1
]}

Chang, RPH ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of similar to 380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. (C) 1998 American Institute of Physics. [S0003-6951(98)00750-5].

引用

页码：3656 / 3658

页数：3

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