Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy

被引:290
作者
Peimyoo, Namphung [1 ]
Shang, Jingzhi [1 ]
Yang, Weihuang [1 ]
Wang, Yanlong [1 ]
Cong, Chunxiao [1 ]
Yu, Ting [1 ,2 ,3 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Natl Univ Singapore, Dept Phys, Fac Sci, Singapore 117542, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, Fac Sci, Singapore 117546, Singapore
基金
新加坡国家研究基金会;
关键词
thermal conductivity; tungsten disulfide; Raman; temperature dependence; excitation power; TEMPERATURE-DEPENDENT RAMAN; MONOLAYER MOS2; VALLEY POLARIZATION; PHONON TRANSPORT; PHOTOLUMINESCENCE; TRANSITION; GRAPHENE; SCATTERING; NANOSHEETS; EVOLUTION;
D O I
10.1007/s12274-014-0602-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the thermal conductivities of monolayer (1L) and bilayer (2L) WS2 grown by chemical vapor deposition (CVD), which are determined by use of temperature and excitation dependences of E (2g) (1) and A(1g) Raman modes. The first-order temperature coefficients of E (2g) (1) and A(1g) modes in both supported and suspended WS2 layers were extracted. The frequency shift of the A(1g) mode with temperature is larger than that of the E (2g) (1) mode for 1L-WS2, which is attributed to stronger electron-phonon coupling for the A(1g) mode than that for the E (2g) (1) mode. Moreover, by use of the shift of the phonon mode induced by laser heating, the thermal conductivities at room temperature were estimated to be 32 and 53 W/(m center dot K) for 1L- and 2L-WS2, respectively. Our results provide fundamental information about the thermal properties of WS2 layers, which is crucial for developing applications of atomically-thin WS2 devices.
引用
收藏
页码:1210 / 1221
页数:12
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