Femtosecond spectroscopy in ZnO with tunable UV pulses

被引：1
|
作者：
Ye, H [1 ]
Fauchet, PM [1 ]
Mathukumar, S [1 ]
Lu, YC [1 ]
机构：
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS V | 2001年 / 4280卷
关键词：
ZnO; femtosecond pump-probe; relaxation time; hot carriers;
D O I：
10.1117/12.424726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hot carrier relaxation dynamics are studied in both intrinsic and n-type ZnO films grown on R-plane sapphire by metalorganic chemical vapor deposition. An ultrafast UV pump/ UV probe experiment was used to study the relaxation process. Absorption saturation and band-gap renormalization are observed. A novel femtosecond pump-probe technique is also used in which the electrons present in n-type ZnO are excited by an infrared pump and the electron dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed The results from those two samples are discussed.
引用
收藏
页码：114 / 122
页数：9
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