Reliability and failure analysis of Cu-Sn transient liquid phase sintered (TLPS) joints under power cycling loads

被引:0
作者
Moeini, S. Ali [1 ]
Greve, Hannes [1 ]
McCluskey, F. Patrick [1 ]
机构
[1] Univ Maryland, A James Clark Sch Engn, Dept Mech Engn, Ctr Adv Life Cycle Engn CALCE, College Pk, MD 20742 USA
来源
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS | 2015年
关键词
Transient liquid Phase Sintered (TLPS) joints; High temperature; Power devices; Power cycling; Reliability analysis; Failure analysis; SILVER JOINTS; TEMPERATURE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The continuous increase in application temperatures of power electronic devices demands new packaging technologies capable of working reliably at high temperatures. Most critical among these new packaging technologies is the need for a new kind of interconnection due to the expanding ban on application of currently used lead containing solders in electronics. In this paper, the performance of a potential interconnect technology (TLPS) with low processing and high application temperatures is investigated under power cycling loading conditions. A test setup compatible with power packages was designed and assembled for this study. This test setup cycles and continuously monitors the temperature of power packages fabricated from a commercially available power diode, TLPS joints, and three types of substrates. Devices are cycled under constant current condition until failure. The failure criterion is defined as either an excessive (>30%) increase in the maximum temperature of the power device or complete electrical failure of the device. The failed samples were destructively analyzed to identify failure modes andmechanisms. Optical Microscopy, Scanning Electron Microscopy (SEM), and Energy Dispersive Spectrometry (EDS) were used to perform a comprehensive failure analysis. The results show that the stiffness of Cu-Sn TLPS joints can result in fracture of the semiconductor device. The prevalent failure mode was diode failure (short-circuit) and fracture of the device under thermomechanical loading was identified as the failure mechanism. Finally, the reliability effects of using different substrates were investigated and compared.
引用
收藏
页码:383 / 389
页数:7
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