Interfacial electronic structure of SrTiO3/SrRuO3 heterojuctions studied by in situ photoemission spectroscopy

被引：7

作者：

Kumigashira, H. ^{[1
]}

Minohara, M. ^{[2
]}

Takizawa, M. ^{[3
]}

Fujimori, A. ^{[3
]}

Toyota, D. ^{[1
]}

Ohkubo, I. ^{[1
]}

Oshima, M. ^{[1
,2
]}

Lippmaa, M. ^{[4
]}

Kawasaki, M. ^{[5
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Grad Sch Arts & Sci, Tokyo 1538902, Japan

[3] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[4] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2899943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ photoemission spectroscopy (PES) has been performed on SrTiO3 (STO)/SrRuO3 (SRO) bilayers to study the interfacial electronic structure of a SRO layer buried in STO. Using the interface (surface) sensitivity of PES measurements, the interface spectra of Ru 4d derived states near the Fermi level (E-F) were extracted from the spectra of STO/SRO bilayers, as well as the surface spectra of SRO films. We found that the Ru 4d derived sharp peak at EF persists at the interface, while it smears out at the surface. These results suggest that the physical properties of SRO are maintained at the interface with STO. (c) 2008 American Institute of Physics.

引用

页数：3

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