Low Temperature Processes for Metal-Oxide Thin Film Transistors

被引：0

作者：

Fruehauf, Norbert ^{[1
]}

Herrmann, Marcus

Baur, Holger

Aman, Mehadi

机构：

[1] Univ Stuttgart, Inst Large Area Microelect, D-70569 Stuttgart, Germany

来源：

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160 degrees C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm(2)/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.

引用

页码：39 / 42

页数：4

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