Low Temperature Processes for Metal-Oxide Thin Film Transistors

Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160 degrees C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm(2)/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.