Low Temperature Processes for Metal-Oxide Thin Film Transistors

被引：0
|
作者：
Fruehauf, Norbert [1 ]
Herrmann, Marcus
Baur, Holger
Aman, Mehadi
机构：
[1] Univ Stuttgart, Inst Large Area Microelect, D-70569 Stuttgart, Germany
来源：
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Processes for realizing ohmic drain/source contacts and a multilayer dielectric for sputtered amorphous oxide thin film transistors with high throughput at 160 degrees C combined with a back-channel etch process have been demonstrated. These transistors achieve a carrier mobility of 8.6 cm(2)/Vs, a subthreshold slope of 0.18 V/dec, threshold voltage of 2.54 V and on/off ratio above 107. The chosen backchannel etch approach can also be extended to be used with drain/source metals such as molybdenum or copper.
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页码：39 / 42
页数：4
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