Monitoring of Si molecular-beam epitaxial growth by an ellipsometric method

被引：3

作者：

Yoshioka, Y ^{[1
]}

Ikuta, T ^{[1
]}

Taji, T ^{[1
]}

Mizobata, K ^{[1
]}

Shimura, T ^{[1
]}

Umeno, M ^{[1
]}

机构：

[1] Osaka Univ, Fac Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 01期

关键词：

ellipsometry; thin film; optical constants; film thickness; molecular-beam epitaxy; Si homoepitaxial growth;

D O I：

10.1143/JJAP.40.371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ellipsometric measurements were applied to investigate Si homoepitaxial growth by molecular-beam epitaxy on a Si(lll)substrate, and the changes in film thickness and optical parameters were monitored. The reflection high-energy electron diffraction (RHEED) intensity oscillation monitoring method was also employed for comparison. In the epitaxial growth mode, Psi and Delta values showed only a small spiral variation and the analyzed optical constants were nearly the same as those of single-crystal Si. The film thickness obtained by the ellipsometric method exhibited good agreement with that obtained by RHEED oscillation as well as by a quartz crystal monitor. Thus, it was shown that the film thickness monitoring by ellipsometry is useful even for the Si/Si homoepitaxial growth with a step Row mechanism, where the RHEED oscillation monitoring method is not available.

引用

页码：371 / 375

页数：5

共 20 条

[1] OPTICAL-PROPERTIES OF THIN-FILMS [J].