Plasma engineering of graphene

被引：139

作者：

Dey, A. ^{[1
]}

Chroneos, A. ^{[2
,3
]}

Braithwaite, N. St J. ^{[4
]}

Gandhiraman, Ram P. ^{[5
]}

Krishnamurthy, S. ^{[1
]}

机构：

[1] Open Univ, Mat Engn, Milton Keynes MK7 6AA, Bucks, England

[2] Coventry Univ, Fac Engn Environm & Comp, Priory St, Coventry CV1 5FB, W Midlands, England

[3] Imperial Coll London, Dept Mat, London SW7 2AZ, England

[4] Open Univ, Dept Phys Sci, Milton Keynes MK7 6AA, Bucks, England

[5] NASA, Ames Res Ctr, Univ Space Res Assoc, Moffett Field, CA 94035 USA

来源：

APPLIED PHYSICS REVIEWS | 2016年 / 3卷 / 02期

关键词：

NITROGEN-DOPED GRAPHENE; CHEMICAL-VAPOR-DEPOSITION; ATMOSPHERIC-PRESSURE; CARBON NANOTUBES; COUNTER ELECTRODES; SINGLE-LAYER; REVERSIBLE HYDROGENATION; SURFACE MODIFICATION; MONOLAYER GRAPHENE; OXIDE;

D O I：

10.1063/1.4947188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, there have been enormous efforts to tailor the properties of graphene. These improved properties extend the prospect of graphene for a broad range of applications. Plasmas find applications in various fields including materials science and have been emerging in the field of nanotechnology. This review focuses on different plasma functionalization processes of graphene and its oxide counterpart. The review aims at the advantages of plasma functionalization over the conventional doping techniques. Selectivity and controllability of the plasma techniques opens up future pathways for large scale, rapid functionalization of graphene for advanced applications. We also emphasize on atmospheric pressure plasma jet as the future prospect of plasma based functionalization processes. Published by AIP Publishing.

引用

页数：19

共 145 条

[1] Developments of plasma etching technology for fabricating semiconductor devices [J].

Abe, Haruhiko ;

Yoneda, Masahiro ;

Fujlwara, Nobuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1435-1455

[2] Evolution of surface morphology and electronic structure of few layer graphene after low energy Ar+ ion irradiation [J].

Al-Harthi, S. H. ;

Kara'a, A. ;

Hysen, T. ;

Elzain, M. ;

Al-Hinai, A. T. ;

Myint, M. T. Z. .

APPLIED PHYSICS LETTERS, 2012, 101 (21)

[3] The electronic properties of graphene and carbon nanotubes [J].

Ando, Tsuneya .

NPG ASIA MATERIALS, 2009, 1 (01) :17-21

[4] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[5]

Balandin AA, 2011, NAT MATER, V10, P569, DOI [10.1038/nmat3064, 10.1038/NMAT3064]

[6] Aminated graphene for DNA attachment produced via plasma functionalization [J].

Baraket, Mira ;

Stine, Rory ;

Lee, Woo K. ;

Robinson, Jeremy T. ;

Tamanaha, Cy R. ;

Sheehan, Paul E. ;

Walton, Scott G. .

APPLIED PHYSICS LETTERS, 2012, 100 (23)

[7] Carbon nanotubes - the route toward applications [J].

Baughman, RH ;

Zakhidov, AA ;

de Heer, WA .

SCIENCE, 2002, 297 (5582) :787-792

[8] Surface modification of graphene and graphite by nitrogen plasma: Determination of chemical state alterations and assignments by quantitative X-ray photoelectron spectroscopy [J].

Bertoti, Imre ;

Mohai, Miklos ;

Laszlo, Krisztina .

CARBON, 2015, 84 :185-196

[9] Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets [J].

Bo, Zheng ;

Yang, Yong ;

Chen, Junhong ;

Yu, Kehan ;

Yan, Jianhua ;

Cen, Kefa .

NANOSCALE, 2013, 5 (12) :5180-5204

[10]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

← 1 2 3 4 5 6 7 8 9 10 →