Epitaxial growth of cubic silicon carbide on silicon by sublimation method

被引：6

作者：

Feng, XF ^{[1
]}

Chen, ZM ^{[1
]}

Ma, JP ^{[1
]}

Zan, X ^{[1
]}

Pu, HB ^{[1
]}

Lu, G ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Appl Elect, Xian 710048, Peoples R China

来源：

OPTICAL MATERIALS | 2003年 / 23卷 / 1-2期

关键词：

Si; 3C-SiC; CVD; sublimation epitaxy;

D O I：

10.1016/S0925-3467(03)00056-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic silicon carbide (3C-SiC) is the most promising material for active devices. Most researches of 3C-SiC epitaxial technology have been focused on chemical vapor deposition (CVD) in the past, but the growth rate of CVD is low. We attempt to grow epitaxial 3C-SiC on Si by sublimation method according to bulk sublimation growth technology. The typical sample is characterized by X-ray diffraction and Raman scattering spectroscopy. The results reveal that the sample is well crystalline. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 42

页数：4

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