An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications

被引：0

作者：

Wang, Chin-Te ^{[1
]}

Kuo, Chien-, I ^{[1
]}

Lim, Wee-Chin ^{[1
]}

Hsu, Li-Han ^{[1
]}

Hsu, Heng-Tung ^{[2
]}

Miyamoto, Yasuyuki ^{[3
]}

Chang, Edward Yi ^{[1
]}

Tsai, Szu-Ping ^{[1
]}

Chiu, Yu-Sheng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Yuan Zi Univ, Dept Commun Engn, Chungli, Taiwan

[3] Tokyo Inst Technol, Dept Phys Elect, Tokyo 152, Japan

来源：

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年

关键词：

InxGa1-xAs-channel; HEMTs; Flip-chip;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.

引用

页数：4

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