Memory Properties of SiOx- and SiNx-Based Memristors

被引：5

作者：

Gritsenko, V. A. ^{[1
,2
,3
]}

Gismatulin, A. A. ^{[1
]}

Orlov, O. M. ^{[4
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[4] Mol Elect Res Inst, Moscow 124460, Russia

来源：

NANOBIOTECHNOLOGY REPORTS | 2021年 / 16卷 / 06期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

CHARGE-TRANSPORT MECHANISM; ELECTRONIC-STRUCTURE; SILICON-OXIDE; BEHAVIOR; TRAPS; HOLES;

D O I：

10.1134/S2635167621060070

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 10(2), a memristor endurance of up to 10(9) cycles at the same memory window, and a memristor retention of up to 10(5) s at the same memory window.

引用

页码：722 / 731

页数：10

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