Submilliwatt, ultrafast and broadband electro-optic silicon switches

被引：93

作者：

Dong, Po ^{[1
]}

Liao, Shirong ^{[1
]}

Liang, Hong ^{[1
]}

Shafiiha, Roshanak ^{[1
]}

Feng, Dazeng ^{[1
]}

Li, Guoliang ^{[2
]}

Zheng, Xuezhe ^{[2
]}

Krishnamoorthy, Ashok V. ^{[2
]}

Asghari, Mehdi ^{[1
]}

机构：

[1] Kotura Inc, Monterey Pk, CA 91754 USA

[2] Oracle, Sun Labs, San Diego, CA 92121 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 24期

关键词：

PHOTONIC NETWORKS; OPTICAL NETWORKS; COMB SWITCH; WAVE-GUIDES; ON-CHIP; COMPACT; FUTURE;

D O I：

10.1364/OE.18.025225

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a broadband 2x2 electro-optic silicon switch with an ultralow switching power and fast switching time based on a Mach-Zehnder interferometer (MZI). Forward-biased p-i-n junctions are employed to tune the phase of silicon waveguides in the MZI, to achieve a p-phase switching power of 0.6 mW with a drive voltage 0.83 V with a MZI arm length of 4 mm. The 10%-90% switching time is demonstrated to be 6 ns. Optical crosstalk levels lower than -17 dB are obtained for an optical bandwidth of 60 nm. The free carrier induced silicon refractive index change is extracted from the experimental results for the concentration range from 10(16) to 10(17) cm(-3). We find that at the concentration of 10(16) cm(-3), the index change is about twice that calculated by the commonly used index change equation. (C) 2010 Optical Society of America

引用

页码：25225 / 25231

页数：7

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