Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

被引：11
|
作者：
Noma, T
Seol, KS
Fujimaki, M
Kato, H
Watanabe, T
Ohki, Y
机构：
[1] Sanyo Elect Co Ltd, Semicond Co, MOS LSI Div, Engn Dept 1, Gunma 3700596, Japan
[2] Waseda Univ, Adv Res Inst Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[3] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[4] Electrotech Lab, Opt Radiat Sect, Tsukuba, Ibaraki 3058568, Japan
[5] Waseda Univ, Dept Elect Elect & Comp Engn, Shinjuku Ku, Tokyo 1698555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 12A期
关键词：
luminescence; photoluminescence; PECVD; silicon oxynitride; silicon nitride; silicon oxide;
D O I：
10.1143/JJAP.39.6587
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 eV results from Si-N bonds in the films and that the present films have regions where SiN bonds gathered.
引用
收藏
页码：6587 / 6593
页数：7
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