Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering

被引：1
|
作者：
Chen, ZH [1 ]
Xiao, XD [1 ]
Au, S [1 ]
Zhou, JM [1 ]
Loy, MMT [1 ]
机构：
[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 04期
关键词：
D O I：
10.1063/1.363051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the experimental studies of in situ kinetic thermal annealing process by Raman scattering obtained from very short period Si/Ge superlattices grown on two types of vicinal Si(100) substrates. The experimental results show that the samples grown on double-stepped vicinal Si(100) substrates have well-defined in-plane strain in the epilayers and rather perfect interfaces. The samples grown on single-stepped vicinal Si(100), on the other hand, appear to have strain-relaxed and imperfect interfaces. The former is also thermodynamically mon stable than the latter, and a suggested explanation is given. (C) 1996 American Institute of Physics.
引用
收藏
页码：2211 / 2215
页数：5
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