Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

被引：67

作者：

Hertenberger, S. ^{[1
,2
]}

Rudolph, D. ^{[1
,2
]}

Bolte, S. ^{[1
,2
,3
]}

Doeblinger, M. ^{[3
]}

Bichler, M. ^{[1
,2
]}

Spirkoska, D. ^{[1
,2
]}

Finley, J. J. ^{[1
,2
]}

Abstreiter, G. ^{[1
,2
,4
]}

Koblmueller, G. ^{[1
,2
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[3] Univ Munich, Dept Chem, D-81377 Munich, Germany

[4] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

关键词：

CATALYST; SURFACE;

D O I：

10.1063/1.3567496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth mechanism of self-induced InAs nanowires (NWs) grown on Si (111) by molecular beam epitaxy was investigated by in situ reflection high energy electron diffraction and ex situ scanning and transmission electron microscopy. Abrupt morphology transition and in-plane strain relaxation revealed that InAs NWs nucleate without any significant delay and under the absence of indium (In) droplets. These findings are independent of the As/In-flux ratio, revealing entirely linear vertical growth rate and nontapered NWs. No evidence of In droplets nor associated change in the NW apex morphology was observed for various growth termination procedures. These results highlight the absence of vapor-liquid-solid growth, providing substantial benefits for realization of atomically abrupt doping and composition profiles in future axial InAs-based NW heterostructures on Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567496]

引用

页数：3