Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

被引：32
作者：
Guo, Wei [1 ]
Kirste, Ronny [1 ]
Bryan, Zachary [1 ]
Bryan, Isaac [1 ]
Gerhold, Michael [2 ]
Collazo, Ramon [1 ]
Sitar, Zlatko [1 ]
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Army Res Off, Engn Sci Directorate, Res Triangle Pk, NC 27703 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 11期
基金：
美国国家科学基金会;
关键词：
ANODIC POROUS ALUMINA; PHOTONIC CRYSTAL; GROWTH; LEDS; ALN;
D O I：
10.1063/1.4915903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes. (C) 2015 AIP Publishing LLC.
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页数：8
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