Hydrogen-boron interactions in p-type diamond

被引：128
作者：
Chevallier, J
Theys, B
Lusson, A
Grattepain, C
Deneuville, A
Gheeraert, E
机构：
[1] CNRS, Phys Solides Bellevue Lab, F-92195 Meudon, France
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble, France
来源：
PHYSICAL REVIEW B | 1998年 / 58卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.58.7966
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on experimental evidence of hydrogen-boron interactions in boron-doped diamond from hydrogen diffusion investigations. Original deuterium diffusion studies in homoepitaxial B-doped diamond films reveal that hydrogen diffusion is limited by the B concentration with a low effective diffusion activation energy. These results are consistent with hydrogen ionization and diffusion of fairly mobile H+ that form pairs with B-. Infrared spectroscopy experiments show that boron acceptor electronic transitions are removed under hydrogenation. [S0163-1829(98)06235-3].
引用
收藏
页码：7966 / 7969
页数：4
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