High-Temperature General Purpose Operational Amplifier in IBM 0.13 μm CMOS Process

被引：0

作者：

Wang, Yucai ^{[1
]}

Chodavarapu, Vamsy P. ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Sensor Microsyst Lab, Montreal, PQ H3A 0E9, Canada

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年

关键词：

high-temperature; amplifier; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a high-temperature general purpose operational amplifier that can operate at an ambient temperature of 200 degrees C. The amplifier is implemented in IBM CMOS 0.13 mu m process with 2.5V power supply. A constant-g(m) biasing technique is used to stabilize the gain and bandwidth variation the over wide temperature range. From 25 degrees C to 200 degrees C, the measured DC gain variation is 5.2dB. At 200 degrees C, the amplifier has DC gain of 57.4dB driving 2pF capacitance load and consumes 0.56mW of average power.

引用

页数：2