Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

被引：19

作者：

Luo, Hongfu ^{[1
]}

Tuinenga, Christopher ^{[1
]}

Guidez, Emilie B. ^{[1
]}

Lewis, Christopher ^{[1
]}

Shipman, Josh ^{[1
]}

Roy, Santanu ^{[1
]}

Aikens, Christine M. ^{[1
]}

Chikan, Viktor ^{[1
]}

机构：

[1] Kansas State Univ, Dept Chem, Manhattan, KS 66506 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 19期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTOR NANOCRYSTALS; INDIUM; APPROXIMATION; MONODISPERSE; GROWTH; ZNSE;

D O I：

10.1021/acs.jpcc.5b01963

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Developing electronic doping of colloidal quantum dots is important for basic science and technology. In this article, the doping of colloidal CdSe quantum dots with gallium atoms is reported. Gallium doping of CdSe quantum dots produces important changes in electronic and optical properties of the material. The gallium doping shows a significant impact on the growth kinetics of quantum dots, which reveals important clues about the mechanism of the gallium dopant incorporation into the CdSe. The results show that the gallium doping significantly impacts the conductivity of CdSe thin film made of the quantum dots as well as the photoluminescence and chemical reactivity of the quantum dots, in agreement with the expected n-type character.

引用

页码：10749 / 10757

页数：9

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