A TCAD methodology for high-speed photodetectors

被引：9

作者：

Jacob, B

Witzigmann, B

Klemenc, M

Petit, C

机构：

[1] ETH, Integrated Syst Lab, Dept Informat Technol & Elect Engn, CH-8092 Zurich, Switzerland

[2] Albis Optoelect AG, CH-8803 Ruschlikon, Switzerland

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 06期

关键词：

TCAD; photodetector; simulation; InGaAs/InP; p-i-n;

D O I：

10.1016/j.sse.2005.03.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Technology computer aided design (TCAD) of semiconductor devices exhibits the advantages of reduced development costs and development time. In this worka TCAD methodology has been developed for high-speed photodetectors. The calibration procedure for fixing the free parameters in the physical models employed in the simulation has been illustrated for a commercially available InGaAs/InP p-i-n photodetector. This approach has been illustrated using a specific example where the task was to optimize the absorption layer thickness of a novel photodetector structure. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1002 / 1008

页数：7

共 10 条

[1]

Adachi S., 1999, Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information, V1st ed.

[2] ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS [J].