A Self-Calibrated Cryogenic Current Cell for 4.2 K Current Steering D/A Converters

被引:8
作者
Rahman, Md Tanvir [1 ,2 ]
Lehmann, Torsten [2 ]
机构
[1] Stamford Univ Bangladesh, Sch Elect Engn, Dhaka 1217, Bangladesh
[2] Univ New South Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
CMOS; cryogenic current cell; cryogenic current steering (CS) D/A converter (DAC); silicon-on-sapphire (SOS); CMOS DAC; TEMPERATURE; MISMATCH;
D O I
10.1109/TCSII.2016.2631489
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a cryogenic CMOS unit current cell operating from room temperature down to 4.2 K, and it is primarily designed for low temperature current steering (CS) D/A converters (DACs). A novel structure along with an analog calibration technique is proposed in designing the cell that helps it to overcome low temperature induced nonlinear and mismatch effects. Due to the flexible configuration of the cell architecture, it can be used in both LSB and MSB parts of a partially-segmented CS DAC. The current cell retains its 4-bit precision level from 300 K down to 4.2 K, and drives a 50 Omega load to 6.8 mV in 600 ps rise time. A 6-bit converter utilizing the cell achieves differential and integral nonlinearity of 0.17 LSB and 0.33 LSB, respectively, while its average power consumption is <3.2 mW from a 3 V power supply. It is fabricated using a commercial 0.5 mu m single poly three metal silicon-on-sapphire CMOS process.
引用
收藏
页码:1152 / 1156
页数:5
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