Characteristics of Micro-Size Light-Emitting Diode With Pentagon-Type Structure

被引：7
作者：
Tan, Lijun [1 ]
Yao, Ruohe [1 ]
Wang, Kai [1 ]
Xie, Zijing [1 ]
Wang, Hong [1 ,2 ]
机构：
[1] South China Univ Technol, Sch Elect & Informat Engn, Engn Res Ctr Optoelect Guangdong Prov, Guangzhou 510640, Peoples R China
[2] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2021年 / 33卷 / 19期
关键词：
Light emitting diodes; Current density; Surface resistance; Substrates; Photonics; Optical variables control; Optical saturation; InGaN; GaN; micro-size LED; pentagon-type structure; total internal reflection; light extraction efficiency; ULTRAVIOLET; EXTRACTION; LAYER; IMPROVEMENT; LEDS;
D O I：
10.1109/LPT.2021.3104645
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We systemically investigated the effect of chip structures on the optical characteristics of micro-size LEDs. The total internal reflection (TIR) can be improved by selecting a suitable chip structure, thereby increasing the light efficiency. The saturation light output power (LOP) of the micro-size LED using pentagon-type structure is 44.78 mW, an increase of 6.08% compared with that of micro-size LED using circular-type structure. Simulation and experimental results indicate that chip structure of pentagon-type can effectively enhance the light extraction from the top or side of the micro-size LED.
引用
收藏
页码：1077 / 1080
页数：4
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