The effect of ultrasonic treatment on the internal friction in silicon

被引：3
作者：
Onanko, AP [1 ]
Podolyan, AA [1 ]
Ostrovskii, IV [1 ]
机构：
[1] Kiev Natl Univ, Kiev, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 08期
关键词：
D O I：
10.1134/1.1606771
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependence of the internal friction in dislocation-free single crystal silicon after preliminary ultrasonic treatment exhibits a dominating peak at T approximate to 510 K. This effect, reported for the first time, can be explained by the ultrasound-induced rearrangement of point defects related to interstitial silicon atoms. (C) 2003 MAIK "Nauka / Interperiodica".
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页码：634 / 635
页数：2
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