Optical and electric properties of indium tin oxide thin films deposited by a sputtering method using a moving gun

被引：0
作者：
Kim, Eundo [2 ]
Lee, Byoung-Seob [1 ]
Bae, Jong-Seong [1 ]
Kim, Jong-Pil [1 ]
Cho, Seong Jin [2 ]
机构：
[1] Korea Basic Sci Inst, High Technol Components & Mat Res Ctr, Pusan 618230, South Korea
[2] Kyungsung Univ, Dept Phys, Pusan 608736, South Korea
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2011年 / 12卷 / 06期
关键词：
ITO; RF magnetron sputtering; optical transparency; transparent conducting oxide; ITO FILMS; TEMPERATURE;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transparent conducting oxide (TCO), indium-tin oxide (ITO) thin films were deposited on a polymer substrate by a RF magnetron sputtering method using a moving gun. A moving gun was used to minimize thermal damage to the substrate and underlying structure. The conditions used for depositing the ITO films were varied. A working pressure in the range of 0.67 to 2.67 Pa and an oxygen flow rate in the range of 0 to 0.3 SCCM were used. The roughness, mobility, electrical resistivity and optical transparency of the ITO films deposited on the polymer substrates were evaluated. The electrical resistivity of ITO films deposited on polyethylene terephthalate substrates at room temperature had a relatively low electrical resistivity, 9.014 x 10(4) Omega.cm. ITO films had a higher electrical resistivity when prepared using a, higher oxygen flow rate and working pressure. The optical transmission of the ITO films was above 85% in the wavelength range 450 to 750 nm. The band gap of the ITO films decreased with an increase in both working pressure and oxygen pressure.
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页码：699 / 703
页数：5
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