Theoretical study on transport properties of a BN co-doped SiC nanotube

被引：40

作者：

Choudhary, Sudhanshu ^{[1
]}

Qureshi, S. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 38期

关键词：

Ab initio; DFT; NEGF; SiCNT;

D O I：

10.1016/j.physleta.2011.08.001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the electronic transport properties of silicon carbide nanotubes (SiCNT) in presence of both boron (B) and nitrogen (N) impurities. The results show that co-doping BN impurities suppresses the important negative differential resistance (NDR) property. NDR suppression is attributed to the introduction of new electronic states near the Fermi level followed by weak orbital localization. BN co-doping results in exponential current-voltage (I-V) characteristics which is in contrast to linear I-V characteristics for individual boron and nitrogen doped SiCNTs. HOMO has no contribution from B impurity, whereas. LUMO has contribution from N impurity at low and high bias. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3382 / 3385

页数：4

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