Dual-defective strategy directing in situ assembly for effective interfacial contacts in MoS2 cocatalyst/In2S3 light harvester layered photocatalysts

被引:60
作者
Fang, Zhibin [1 ]
Huang, Xueyan [1 ]
Wang, Yaozhu [1 ]
Feng, Wenhui [1 ]
Zhang, Yan [1 ]
Weng, Sunxian [2 ]
Fu, Xianzhi [1 ]
Liu, Ping [1 ]
机构
[1] Fuzhou Univ, Res Inst Photocatalysis, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350002, Peoples R China
[2] State Grid Fujian Elect Power Res Inst, Fuzhou 350002, Peoples R China
基金
国家科技攻关计划; 中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; REDUCED GRAPHENE OXIDE; ACTIVE EDGE SITES; HYDROGEN-EVOLUTION; VISIBLE-LIGHT; H-2; EVOLUTION; ULTRATHIN NANOSHEETS; EFFICIENT; IRRADIATION; GROWTH;
D O I
10.1039/c6ta05507a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Defective MoS2 nanosheets have been demonstrated to be a superior catalyst for hydrogen evolution; however, mediocre interfacial contact between the MoS2 cocatalyst and the light harvester still impedes the pursuit of composite photocatalyst systems with highly efficient performance. Herein, we propose a dual-defective assembly methodology following the chemical similarity principle to construct effectivelybinding MoS2/In2S3 photocatalysts, in which luxuriant defects on layered In2S3 nanosheets serve as in situ growth sites for defective MoS2 layers with abundant exposed edges. The resulting dual-defective system is endowed with improved separation of electron-hole pairs, beneficial interfacial migration and utilization of electrons, and decreased photocorrosion from holes. By this method, the system achieves dramatically enhanced hydrogen evolution activity as well as considerable stability. The imperfections in both MoS2 and In2S3 are indispensable for desirable performance. The present strategy can not only direct the manufacture of defective MoS2-incorporated photocatalysts but may also contribute to the design of other highly active cocatalyst/light harvester systems with effective interfacial contacts.
引用
收藏
页码:13980 / 13988
页数:9
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