Structural and Electrical Characterization of Ag(Ta0.5Nb0.5)O3 and Ag(Ta0.8Nb0.2)O3 Ceramics

被引：2

作者：

Lee, Ku-tak ^{[1
]}

Yun, Seok-Woo ^{[1
]}

Koh, Jung-Hyuk ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Mat Engn, Seoul 139701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

XRD; NTCR properties; Dielectric properties; Leakage current density; Relaxation current; DIELECTRIC-PROPERTIES; PHASE SHIFTERS; THICK-FILMS; CAPACITORS;

D O I：

10.3938/jkps.59.2478

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-loss ferroelectric materials have been extensively investigated for high-frequency applications. Especially, weak frequency dispersion materials with high dielectric permittivity and low loss tangent have enormous potential for electronic components, including filters and embedded capacitors. We found the Ag(Ta0.8Nb0.2)O-3 material to have weak frequency dispersion. In this paper, we will discuss the dielectric and the relaxation properties of Ag(Ta0.5Nb0.5)O-3 and Ag(Ta0.8Nb0.2)O-3 ceramics for device applications. X-ray diffraction analyses were performed to determine their structural properties, and both the frequency-dependent dielectric permittivity and the time-dependent relaxation behavior were analyzed to determine their electrical properties.

引用

页码：2478 / 2481

页数：4

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