A custom made magnetic force microscope is used to study the magnetization process in thin films of FePd throughout the entire hysteresis loop. The 40 nm thick sample has a strong perpendicular anisotropy, which leads to a maze of 80 nm wide stripes of opposite polarity in the remanent state. The growth of M, when H increases, happens through an unwinding of the reversed domain along their axis. Together with the length recession, the reversed domain width also contracts with increasing field. The later effect is estimated by comparison of our images with magneto-optical Kerr measurements. A large disorder in the propagation process of the domain walls is observed. It is also found that the bubble configuration near the saturation field is unstable. (C) 2001 American Institute of Physics.
机构:
Sindhi Soc, VES Coll Arts Sci & Commerce, Bombay 400071, Maharashtra, IndiaSindhi Soc, VES Coll Arts Sci & Commerce, Bombay 400071, Maharashtra, India
Gupta, Rachana
Gupta, Mukul
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Bhabha Atom Res Ctr, UGC DAE Consortium Sci Res, Bombay 400085, Maharashtra, IndiaSindhi Soc, VES Coll Arts Sci & Commerce, Bombay 400071, Maharashtra, India
Gupta, Mukul
Gutberlet, Thomas
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ETH, Neutron Scattering Lab, CH-5232 Villigen, Switzerland
Paul Scherrer Inst, CH-5232 Villigen, SwitzerlandSindhi Soc, VES Coll Arts Sci & Commerce, Bombay 400071, Maharashtra, India
Gutberlet, Thomas
PRAMANA-JOURNAL OF PHYSICS,
2008,
71
(05):
: 1123
-
1127
机构:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
Saito, Naoya
Yamada, Michiya
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Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
Yamada, Michiya
Nakagawa, Shigeki
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机构:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S3-42 Ookayama, Meguro-ku, Tokyo 152-8552, Japan