Optical and Electrical Properties of Cu2ZnSnS4 Film Prepared by Sulfurization Method

被引：29

作者：

Jiang, Feng ^{[1
]}

Shen, Honglie ^{[1
]}

Wang, Wei ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 08期

基金：

中国国家自然科学基金;

关键词：

CZTS; sulfurization; persistent photoconductivity; PULSED-LASER DEPOSITION; THIN-FILMS; SOLAR-CELLS;

D O I：

10.1007/s11664-012-2112-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu2ZnSnS4 (CZTS) films were prepared by sulfurization of sputtered Zn/Sn/Cu multilayer thin films. Raman peaks at 251 cm(-1), 289 cm(-1), 336 cm(-1), and 362 cm(-1) were detected, and the optical band gap energy of the CZTS was estimated to be about 1.53 eV. Energy-dispersive spectrometry and x-ray photoelectron spectroscopy reveal that the composition ratio of prepared CZTS film is close to stoichiometric. Photoresponse current measurements show persistent photoconductivity effect, with decay constants tau and beta of 5.04 and 0.269, respectively.

引用

页码：2204 / 2209

页数：6

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