Study on quantum interference effects of 1s ortho-excitons in Cu2O

被引:4
作者
Kono, S [1 ]
Nagasawa, N [1 ]
机构
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
关键词
semiconductors; optical properties; luminescence;
D O I
10.1016/S0038-1098(98)00617-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The resonant emission of the 1s ortho-excitons in Cu2O is studied under a band-to-band excitation in external magnetic field, B similar to 0 at 1.6 K. The emission intensity shows a characteristic B-dependence. This is interpreted as a manifestation of the Hanle effect on the ortho-excitons. The level width of the exciton state is evaluated to be 8.8 mu eV. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:159 / 161
页数:3
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