Investigation of chemical bath deposition of CdO thin films using three different complexing agents

被引：100

作者：

Khallaf, Hani ^{[1
]}

Chen, Chia-Ta ^{[2
,3
]}

Chang, Liann-Be ^{[2
,3
]}

Lupan, Oleg ^{[1
,4
]}

Dutta, Aniruddha ^{[1
,5
]}

Heinrich, Helge ^{[1
,5
]}

Shenouda, A. ^{[6
]}

Chow, Lee ^{[1
,5
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Chang Gung Univ, Grad Inst Electroopt Engn, Tao Yuan 333, Taiwan

[3] Chang Gung Univ, Green Technol Res Ctr, Tao Yuan 333, Taiwan

[4] Tech Univ Moldova, Dept Microelect & Semicond Devices, MD-2004 Kishinev, Moldova

[5] Univ Cent Florida, Adv Mat Proc & Anal Ctr, Dept Mech Mat & Aerosp Engn, Orlando, FL 32816 USA

[6] Cent Met R&D Inst CMRDI, Helwan, Egypt

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 22期

关键词：

CdO; Thin films; Group II-VI Semiconductors; Chemical bath deposition; SOLUTION GROWTH TECHNIQUE; CADMIUM-OXIDE FILMS; PHYSICAL-PROPERTIES; DOPED CDO; ZNSE; PRESSURE; LAYERS; CDSE;

D O I：

10.1016/j.apsusc.2011.04.060

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO4 is used as Cd precursor, while H2O2 is used as an oxidation agent. As-grown films are mainly cubic CdO2, with some Cd(OH)(2) as well as CdO phases being detected. Annealing at 400 degrees C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00: 1.74 +/- 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 x 10(20) cm(-3) and a resistivity as low as 1.04 x 10(-2) Omega-cm are obtained. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：9237 / 9242

页数：6

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