Effect of Silicon Doped Quantum Barriers on Nitride-Based Light Emitting Diodes

被引：4

作者：

Chiang, T. H. ^{[1
,2
]}

Chiou, Y. Z. ^{[3
]}

Chang, S. J. ^{[1
,2
]}

Lin, T. K. ^{[4
]}

Chang, S. P. ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] So Taiwan Univ, Dept Elect Engn, Tainan 71005, Taiwan

[4] Epistar Corp, Tainan 744, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 08期

关键词：

WELL; LEDS;

D O I：

10.1149/1.3603970

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 x 10(18)/cm(3) silicon doping barrier layer was less sensitive to elevated temperature. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3603970] All rights reserved.

引用

页码：H836 / H839

页数：4

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