Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

被引：10

作者：

Baert, B. ^{[1
]}

Gupta, S. ^{[2
,3
]}

Gencarelli, F. ^{[2
,3
]}

Loo, R. ^{[2
]}

Simoen, E. ^{[2
]}

Nguyen, N. D. ^{[1
]}

机构：

[1] Univ Liege, Dept Phys Solid State Phys Interfaces & Nanostruc, B-4000 Liege, Belgium

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, MTM Dept, B-3001 Leuven, Belgium

来源：

SOLID-STATE ELECTRONICS | 2015年 / 110卷

关键词：

GeSn; Electrical characterization; I-V characteristics; C-V characteristics; Numerical simulation; Admittance spectroscopy; SELECTIVE EPITAXIAL-GROWTH; NUMERICAL-SIMULATION; ENERGY-DISTRIBUTION; ACTIVATION-ENERGY; LEAKAGE CURRENT; EXTRACTION; IMPEDANCE;

D O I：

10.1016/j.sse.2015.01.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current voltage and capacitance voltage measurements. These structures are made from GeSn epitaxial layers grown by CVD on Ge with in situ doping by Boron. As results, an average ideality factor of 1.2 has been determined and an activation energy comprised between 0.28 eV and 0.30 eV has been extracted from the temperature dependence of the reverse-bias current. Based on the comparison with numerical results obtained from device simulations, we explain this activation energy by the presence of traps located near the GeSn/Ge interface. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：65 / 70

页数：6

共 32 条

[1] Impedance Spectroscopy of GeSn-based Heterostructures [J].

Baert, B. ;

Nakatsuka, O. ;

Zaima, S. ;

Nguyen, N. D. .

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09) :481-490

[2] Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [J].

Baert, B. ;

Schmeits, M. ;

Nguyen, N. D. .

APPLIED SURFACE SCIENCE, 2014, 291 :25-30

[3] Defect induced non-ideal dark I-V characteristics of solar cells [J].

Breitenstein, O. ;

Bauer, J. ;

Lotnyk, A. ;

Wagner, J. -M. .

SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (4-5) :182-189

[4] Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components [J].

Czerwinski, A ;

Simoen, E ;

Poyai, A ;

Claeys, C .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :1218-1221

[5] EPITAXIAL NECKING IN GAAS GROWN ON PRE-PATTERNED SI SUBSTRATES [J].

FITZGERALD, EA ;

CHAND, N .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (10) :839-853

[6] Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn [J].

Gencarelli, F. ;

Vincent, B. ;

Demeulemeester, J. ;

Vantomme, A. ;

Moussa, A. ;

Franquet, A. ;

Kumar, A. ;

Bender, H. ;

Meersschaut, J. ;

Vandervorst, W. ;

Loo, R. ;

Caymax, M. ;

Temst, K. ;

Heyns, M. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (04) :P134-P137

[7] Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 [J].

Gencarelli, F. ;

Vincent, B. ;

Souriau, L. ;

Richard, O. ;

Vandervorst, W. ;

Loo, R. ;

Caymax, M. ;

Heyns, M. .

THIN SOLID FILMS, 2012, 520 (08) :3211-3215

[8] Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 °C Si2H6 Passivation [J].

Gong, Xiao ;

Han, Genquan ;

Bai, Fan ;

Su, Shaojian ;

Guo, Pengfei ;

Yang, Yue ;

Cheng, Ran ;

Zhang, Dongliang ;

Zhang, Guangze ;

Xue, Chunlai ;

Cheng, Buwen ;

Pan, Jisheng ;

Zhang, Zheng ;

Tok, Eng Soon ;

Antoniadis, Dimitri ;

Yeo, Yee-Chia .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) :339-341

[9] Defect assessment and leakage control in Ge junctions [J].

Gonzalez, M. B. ;

Simoen, E. ;

Eneman, G. ;

De Jaeger, B. ;

Wang, G. ;

Loo, R. ;

Claeys, C. .

MICROELECTRONIC ENGINEERING, 2014, 125 :33-37

[10]

Gupta S, 2012, M EL SOC, P3222

← 1 2 3 4 →